ts4148 rwg 350mw high speed smd switching diode ? extremely thin/leadless package ? high mounting capability,strong surage with stand, high reliability. ? pb free version and rohs compliant ? case :1005 standard package, molded plastic min max min max 2.40 2.60 0.095 0.102 1.10 1.30 0.043 0.051 0.70 0.90 0.027 0.035 typ. 0.50 typ. 0.020 typ. 1.00 typ. 0.040 package 1005 maximum ratings 1 sec 1 msec electrical characteristics reverse breakdown voltage (note 2) forward voltage i f = 50ma v r = 20v v r = 75v junction capacitance v r =0, f=1.0mhz reverse recovery time (note3) notes:1. valid provided that electrodes are kept at ambient temperature notes:2. test condition : i r =100a notes:3. test condition : i f =i r =30ma, r l =100?, i rr =3ma ma v (br) v f c t j , t stg units v - - v type number ordering information ma c/w 100 c mean forward current i frm i o pulse width= thermal resistance (junction to ambient) (note 1) d ? high temperature soldering guaranteed: 260 c/10s pf trr ns - 4.0 c j 4 junction and storage temperature range reverse leakage current min - -40 to + 125 type number symbol rja i r 150 2.5 max 500 1.0 75 25 1.00 unit (inch) pulse width= 300 value 350 repetitive peak forward current ? polarity : indicated by cathode band ? weight : 0.006 gram (approximately) rating at 25 c ambient temperature unless otherwise specified. units ?halogen free power dissipation symbol 1005 maximum ratings and electrical characteristics features mechanical data ? terminal: gold plated, solderable per mil-std-750, method 2026 guaranteed unit (mm) v na a ? designed for mounting on small surface. non-repetitive peak forward surge current i fsm a 4.0 a b v 75 part no. packing ts4148 rwg 4kpcs / 7" reel non-repetitive peak reverse voltage p d v rsm mw e dimensions repetitive peak reverse voltage v rrm small signal diode version : d10 a b d c e
ts4148 rwg 350mw high speed smd switching diode small signal diode rating and sharacteristic curves fig 3 admissible power dissipation curve 0 70 140 210 280 350 0 25 50 75 100 125 150 power dissipation (mw) fig 4 typical junction capacitance 0 1 2 3 4 5 0 5 10 15 20 25 30 35 junction capacitance (pf) ambient temperature (c) reverse voltage (v) fig 1 typical forward characteristics 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (ma) fig 5 forward resistance vs. forward current 1 10 100 1000 10000 0 0 1 10 100 forward current (ma) dynamic forward resistance ( ? ) ta=25c instantaneous forward voltage (v) fig 2 reverse current vs reverse voltage 0.01 0.1 1 10 100 0 20 40 60 80 100 120 reverse current (ua) reverse voltage (v) ta=25c version : d10
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